 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Power Transistors 2SB0949 (2SB949), 2SB0949A (2SB949A) Silicon PNP epitaxial planar type darlington 4.20.2 Unit: mm 0.70.1 10.00.2 5.50.2 4.20.2 2.70.2 For power amplification and switching Complementary to 2SD1275 and 2SD1275A * High forward current transfer ratio hFE * High-speed switching * Full-pack package which can be installed to the heat sink with one screw 16.70.3 7.50.2 Features 3.10.1 Solder Dip (4.0) 14.00.5 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) 2SB0949 2SB0949A VCEO VEBO IC ICP TC = 25C PC Tj Tstg Symbol VCBO Rating -60 -80 -60 -80 -5 -2 -4 35 2 150 -55 to +150 C C V A A W V Unit V 1.40.1 1.30.2 0.5+0.2 -0.1 0.80.1 2.540.3 5.080.5 Collector-emitter voltage 2SB0949 (Base open) 2SB0949A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 123 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection C B Electrical Characteristics Ta = 25C 3C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0949 2SB0949A 2SB0949 2SB0949A IEBO hFE1 hFE2 * Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf ICEO 2SB0949 2SB0949A VBE ICBO VCE = -4 V, IC = -2 A VCB = -60 V, IE = 0 VCB = -80 V, IE = 0 VCE = -30 V, IB = 0 VCE = -40 V, IB = 0 VEB = -5 V, IC = 0 VCE = -4 V, IC = -1 A VCE = -4 V, IC = -2 A IC = -2 A, IB = -8 mA VCE = -10 V, IC = - 0.5 A, f = 1 MHz IC = -2 A, IB1 = -8 mA, IB2 = 8 mA VCC = -50 V 20 0.4 1.5 0.5 1 000 1 000 Symbol VCEO Conditions IC = -30 mA, IB = 0 Min -60 -80 Typ E Max Unit V -2.8 -1 -1 -2 -2 -2 10 000 -2.5 V MHz s s s mA mA V mA Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 R 1 000 to 2 500 Q P 2 000 to 5 000 4 000 to 10 000 Note) The part numbers in the parenthesis show conventional part number. Publication date: April 2003 SJD00028BED 1 2SB0949, 2SB0949A PC Ta 50 IC VCE -5 -10 TC=25C IC VBE VCE=-4V Collector power dissipation PC (W) 40 Collector current IC (A) 30 -3 Collector current IC (A) (1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)With a 50x50x2mm Al heat sink (4)Without heat sink (PC=2W) -4 IB=-2.0mA -1.8mA -1.6mA -1.4mA -1.2mA -1.0mA -0.8mA -0.6mA -8 -6 25C 20 (1) -2 4.0mA -4 TC=100C -25C 10 (3) (4) 0 0 40 (2) -1 -0.2mA -0.1mA -2 80 120 160 0 0 -1 -2 -3 -4 -5 0 0 - 0.8 -1.6 -2.4 -3.2 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC/IB=250 hFE IC VCE=-4V Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 104 IE=0 f=1MHz TC=25C 105 Forward current transfer ratio hFE -10 104 TC=100C 25C 103 -25C -1 TC=100C -25C 25C 103 102 - 0.1 102 10 - 0.01 - 0.01 - 0.1 -1 -10 10 - 0.01 - 0.1 -1 -10 1 - 0.1 -1 -10 -100 Collector current IC (A) Collector current IC (A) Collector-base voltage VCB (V) Safe operation area -100 Non repetitive pulse TC=25C Rth t 103 (1)Without heat sink (2)With a 100x100x2mm Al heat sink (1) Thermal resistance Rth (C/W) Collector current IC (A) -10 ICP t=1ms IC DC 102 10 (2) -1 t=10ms 1 - 0.1 2SB0949A 2SB0949 10-1 - 0.01 -1 -10 -100 -1 000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector-emitter voltage VCE (V) Time t (s) 2 SJD00028BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
Price & Availability of 2SB0949
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |